10N60C Datasheet (PDF)
These N-Channel enhancement mode power field effect transistors are produced
These N-Channel enhancement mode power field effect transistors are produced
Drain lead soldered to water cooled heatsink, PD ad-justed for a peak junction temperature of +150 oC. 1 cubic foot chamber, free air. TJ=25 oC unless otherwise specified. Max. BreakdownVoltage
This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored
Average Time to Ship 1-3 Days. Please see product page, cart, and checkout for actual ship speed. will need to change in order to meet ON Semiconductor ''s system requirements. Since the ON
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Download the 10N60C datasheet PDF (870.91 KB) by Fairchild (now onsemi). Includes overview, features, pinout, and specifications.
PDF version includes complete article with source references. Suitable for printing and offline reading.